IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:

4,835,592

4,881,106

5,017,508

5,049,961

5,187,117

5,486,715

4,850,072

4,931,844

5,034,796

5,063,307

5,237,481

5,381,025

IXYS reserves the right to change limits, test conditions, and dimensions.

Symbol

Test Conditions

Characteristic Values

(T

min.

typ.

max.

g

fs

V

Notes 2, 3

35

50

S

C

iss

4600

pF

C

oss

V

1400

pF

C

rss

680

pF

t

d(on)

30

ns

t

r

V

I

T

55

ns

t

d(off)

R

68

ns

t

f

20

ns

Q

g(on)

180

nC

Q

gs

V

I

T

39

nC

Notes 2, 3

Q

gd

85

nC

R

thJC

0.40

K/W

R

thCK

0.15

K/W

Source-Drain Diode

Characteristic Values

(T

Symbol

Test Conditions

min.

typ.

max.

I

S

V

80

A

I

SM

Repetitive; Note 1

320

A

V

SD

I

I

1.5

V

t

rr

200

ns

Q

RM

1.2

m C

I

RM

10

A

I

Note: 1. Pulse width limited by T

JM

2. Pulse test, t

£ 300 ms, duty cycle d £ 2 %

3. I

Dim.

Millimeter

Inches

Min.

Max.

Min.

Max.

A

4.83

5.21

.190

.205

A

1

2.29

2.54

.090

.100

A

2

1.91

2.16

.075

.085

b

1.14

1.40

.045

.055

b

1

1.91

2.13

.075

.084

b

2

2.92

3.12

.115

.123

C

0.61

0.80

.024

.031

D

20.80

21.34

.819

.840

E

15.75

16.13

.620

.635

e

5.45 BSC

.215 BSC

L

19.81

20.32

.780

.800

L1

3.81

4.32

.150

.170

Q

5.59

6.20

.220 0.244

R

4.32

4.83

.170

.190

Terminals:

1 - Gate

2 - Drain (Collector)

3 - Source (Emitter)

4 - Drain (Collector)

IXFR 80N15Q