IXYS reserves the right to change limits, test conditions, and dimensions.

IXFV110N25T

IXFV110N25TS

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

g

fs

V

65

110

S

C

iss

9400

pF

C

oss

V

850

pF

C

rss

55

pF

t

d(on)

19

ns

t

r

27

ns

t

d(off)

60

ns

t

f

27

ns

Q

g(on)

157

nC

Q

gs

V

40

nC

Q

gd

50

nC

R

thJC

0.18 °C/W

R

thCS

0.21

°C/W

Source-Drain Diode

Symbol

Test Conditions

Characteristic Values

T

Min.

Typ.

Max.

I

S

V

110

A

I

SM

Repetitive, pulse width limited by T

JM

350

A

V

SD

I

1.2

V

t

rr

170 ns

Q

RM

946

nC

I

RM

17

A

≤ 300ms; duty cycle, d ≤ 2%.

2. On through-hole packages, R

DS(on)

Kelvin test contact location must be

5 mm or less from the package body.

IXYS MOSFETs and IGBTs are covered

4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065 B1

6,683,344

6,727,585

7,005,734 B2

7,157,338B2

by one or moreof the following U.S. patents: 4,850,072

5,017,508

5,063,307

5,381,025

6,259,123 B1

6,534,343

6,710,405 B2 6,759,692

7,063,975 B2

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728 B1

6,583,505

6,710,463

6,771,478 B2 7,071,537

Resistive Switching Times

V

R

G

= 2

Ω (External)

I

V

PLUS220SMD (IXFV_S) Outline

PLUS220 (IXFV) Outline

PRELIMINARY TECHNICAL INFORMATION

The product presented herein is under development. The Technical Specifications offered are derived

from data gathered during objective characterizations of preliminary engineering lots; but also may yet

contain some information supplied during a pre-production design evaluation. IXYS reserves the right

to change limits, test conditions, and dimensions without notice.