IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXFZ520N075T2

IXYS MOSFETs and IGBTs are covered

4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065 B1

6,683,344

6,727,585

7,005,734 B2

7,157,338B2

by one or more of the following U.S. patents: 4,850,072

5,017,508

5,063,307

5,381,025

6,259,123 B1

6,534,343

6,710,405 B2 6,759,692

7,063,975 B2

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728 B1

6,583,505

6,710,463

6,771,478 B2 7,071,537

Note 1. Pulse test, t

≤ 300μs, duty cycle, d ≤ 2%.

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

g

fs

V

95

160

S

C

iss

41

nF

C

oss

V

4150

pF

C

rss

530

pF

R

GI

Gate Input Resistance

1.36

Ω

t

d(on)

48

ns

t

r

36

ns

t

d(off)

80

ns

t

f

35

ns

Q

g(on)

545

nC

Q

gs

V

177

nC

Q

gd

135

nC

R

thJC

0.25

°C/W

R

thCS

0.15

°C/W

Source-Drain Diode

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

I

S

V

520

A

I

SM

Repetitive, Pulse Width Limited by T

JM

1600

A

V

SD

I

1.25

V

t

rr

150 ns

I

RM

7

A

Q

RM

357

nC

Resistive Switching Times

V

R

I

-di/dt = 100A/

μs

V

ADVANCE TECHNICAL INFORMATION

The product presented herein is under development. The Technical Specifications offered are derived

from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a

"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test

conditions, and dimensions without notice.