IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXGA16N60B2D1

IXGP16N60B2D1

IXGH16N60B2D1

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

g

fs

I

8

S

C

ies

675

pF

C

oes

V

70

pF

C

res

20

pF

Q

g(on)

24

nC

Q

ge

I

5

nC

Q

gc

13

nC

t

d(on)

18

ns

t

ri

20

ns

E

on

0.16

mJ

t

d(off)

73

ns

t

fi

70

ns

E

off

0.12

0.22 mJ

t

d(on)

17

ns

t

ri

20

ns

E

on

0.26

mJ

t

d(off)

140

ns

t

fi

125

ns

E

off

0.38

mJ

R

thJC

0.83

°C/W

R

thCK

TO-220

0.50

°C/W

TO-247

0.21

°C/W

IXYS MOSFETs and IGBTs are covered

4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065 B1

6,683,344

6,727,585

7,005,734 B2

7,157,338B2

by one or more of the following U.S. patents: 4,850,072

5,017,508

5,063,307

5,381,025

6,259,123 B1

6,534,343

6,710,405 B2 6,759,692

7,063,975 B2

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728 B1

6,583,505

6,710,463

6,771,478 B2 7,071,537

Inductive load, T

I

V

Note 2

Notes:

1. Pulse test, t

≤ 300μs, duty cycle, d ≤ 2%.

2. Switching times & energy losses may increase for higher V

Inductive load, T

I

V

Note 2

Reverse Diode (FRED)

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

V

F

I

3.0

V

T

1.7

V

I

RM

2.5

A

t

rr

110

ns

t

rr

30

ns

R

thJC

2.5 °C/W

I

-di

I