IXGP16N60C2D1 datasheet(1/7 Pages) IXYS

Part #	IXGP16N60C2D1

Description	HiPerFAST IGBTs C2-Class High Speed w/ Diode

PDF	7 Pages

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Manufacturer	IXYS [IXYS Corporation]

Direct Link	http://www.ixys.com

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1 / 7 page

Symbol

Test Conditions

Maximum Ratings

V

CES

T

J

= 25

°C to 150°C

600

V

CGR

T

J

= 25

°C to 150°C, R

GE = 1MΩ

600

V

GES

Continuous

±20

V

GEM

Transient

±30

V

I

C25

T

C = 25°C40

A

I

C110

T

C = 110°C16

A

I

F110

T

C = 110°C11

A

I

CM

T

C = 25°C, 1ms

100

A

SSOA

V

GE = 15V, TJ = 125°C, RG = 22Ω

I

CM = 32

A

(RBSOA)

Clamped Inductive load

V

CE ≤

≤≤≤≤ V

CES

P

C

T

C = 25°C

150

W

T

J

-55 ... +150

°C

T

JM

150

°C

T

stg

-55 ... +150

°C

M

d

Mounting Torque (TO-220 & TO-247)

1.13/10

Nm/lb.in.

F

C

Mounting Force (TO-263)

10..65 / 2.2..14.6

N/lb.

T

L

Maximum Lead Temperature for Soldering

300

°C

T

SOLD

1.6mm (0.062 in.) from Case for 10s

260

°C

Weight

TO-263

2.5

g

TO-220

3.0

g

TO-247

6.0

g

DS99179B(08/10)

HiPerFASTTM IGBTs

C2-Class High Speed

w/ Diode

V

CES

= 600V

I

C110

= 16A

V

CE(sat) ≤

≤≤≤≤ 3.0V

t

fi(typ)

= 33ns

Features

Optimized for Low Switching Losses

Square RBSOA

Anti-Parallel Ultra Fast Diode

International Standard Packages

Advantages

High Power Density

Low Gate Drive Requirement

Applications

Power Inverters

UPS

Motor Drives

SMPS

PFC Circuits

Battery Chargers

Welding Machines

Lamp Ballasts

IXGA16N60C2D1

IXGP16N60C2D1

IXGH16N60C2D1

TO-247 (IXGH)

G

D

S

C

E

G = Gate

C

= Collector

E = Emitter

Tab = Collector

TO-263 AA (IXGA)

G

C E

TO-220AB (IXGP)

G

E

C (Tab)

Symbol

Test Conditions

Characteristic Values

(T

J = 25°C, Unless Otherwise Specified)

Min.

Typ.

Max.

V

GE(th)

I

C

= 250

μA, V

CE = VGE

3.0

5.5

V

I

CES

V

CE = VCES, VGE = 0V

25 μA

T

J = 125°C

1 mA

I

GES

V

CE = 0V, VGE = ±20V

±100 nA

V

CE(sat)

I

C

= 12A, V

GE = 15V, Note1

3.0

V

T

J = 125°C

1.8

V

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IXGP16N60C2D1 Datasheet(PDF) 1 Page - IXYS Corporation

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