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IXGP30N60C3D4 Datasheet(PDF) 1 Page - IXYS Corporation

Part # IXGP30N60C3D4
Description  GenX3 600V IGBT With Diode
PDF  7 Pages
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Manufacturer  IXYS [IXYS Corporation]
Direct Link  http://www.ixys.com
Logo IXYS - IXYS Corporation

IXGP30N60C3D4 Datasheet(HTML) 1 Page - IXYS Corporation

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© 2008 IXYS CORPORATION, All rights reserved
GenX3TM 600V IGBT
With Diode
Symbol
Test Conditions
Maximum Ratings
V
CES
T
C = 25°C to 150°C
600
V
V
CGR
T
J = 25°C to 150°C, RGE = 1MΩ
600
V
V
GES
Continuous
± 20
V
V
GEM
Transient
± 30
V
I
C25
T
C = 25°C
60
A
I
C110
T
C = 110°C
30
A
I
CM
T
C = 25°C, 1ms
150
A
SSOA
V
GE = 15V, TVJ = 125°C, RG = 5Ω
I
CM =
60
A
(RBSOA)
Clamped inductive load @
≤ 600V
P
C
T
C = 25°C
220
W
T
J
-55 ... +150
°C
T
JM
150
°C
T
stg
-55 ... +150
°C
T
L
1.6mm (0.062 in.) from case for 10s
300
°C
T
SOLD
Plastic body for 10 seconds
260
°C
M
d
Mounting torque (TO-220)
1.13/10
Nm/lb.in.
Weight
TO-220
2.5
g
TO-263
3.0
g
DS100073(11/08)
G = Gate
C
= Collector
E = Emitter
TAB = Collector
Symbol Test Conditions
Characteristic Values
(T
J = 25°C unless otherwise specified)
Min.
Typ.
Max.
BV
CES
I
C = 250μA, VGE = 0V
600
V
V
GE(th)
I
C = 250μA, VCE = VGE
3.5
5.5
V
I
CES
V
CE = VCES
75
μA
V
GE = 0V
T
J = 125°C
500
μA
I
GES
V
CE = 0V, VGE = ± 20V
±100 nA
V
CE(sat)
I
C = 20A, VGE = 15V, Note 1
2.6
3.0
V
T
J = 125°C
1.8
V
V
CES
= 600V
I
C110
= 30A
V
CE(sat) ≤
≤≤≤≤ 3.0V
t
fi(typ)
= 47ns
High Speed PT IGBTs for
40-100kHz switching
Features
Optimized for low switching losses
Square RBSOA
Anti-parallel ultra fast diode
International standard packages
Advantages
High power density
Low gate drive requirement
Applications
High Frequency Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
IXGA30N60C3D4
IXGP30N60C3D4
Preliminary Technical Information
C(TAB)
TO-263 (IXGA)
G
E
C(TAB)
TO-220 (IXGP)
G
E
C


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