IXYS reserves the right to change limits, test conditions, and dimensions.

IXGH 50N60C2

IXGT 50N60C2

IXYS MOSFETs and IGBTs are covered by one or more

4,850,072

4,931,844

5,034,796

5,063,307

5,237,481

5,381,025

6,404,065B1 6,162,665

6,534,343

6,583,505

of the following U.S. patents:

4,835,592

4,881,106

5,017,508

5,049,961

5,187,117

5,486,715

6,306,728B1

6,259,123B1 6,306,728B1 6,683,344

Fig. 7. Transconductance

0

10

20

30

40

50

60

70

0

20

40

60

80

100 120 140 160 180 200

I

125ºC

Fig. 8. Dependence of Turn-Off

Energy on R

G

0

0.3

0.6

0.9

1.2

1.5

1.8

2.1

2.4

2.7

3

2

4

6

8

10

12

14

16

18

R

Fig. 9. Dependence of Turn-Off

Energy on I

c

0

0.2

0.4

0.6

0.8

1

1.2

1.4

1.6

1.8

2

2.2

20

30

40

50

60

70

80

I

Fig. 10. Dependence of Turn-Off

Energy on Tem perature

0

0.3

0.6

0.9

1.2

1.5

1.8

2.1

2.4

25

35

45

55

65

75

85

95

105 115 125

T

Fig. 11. Dependence of Turn-Off

Sw itching Tim e on R

G

50

100

150

200

250

300

350

400

450

2

4

6

8

10

12

14

16

18

R

t

d(off)

t

Fig. 12. Dependence of Turn-Off

Sw itching Tim e on I

c

40

60

80

100

120

140

160

180

200

20

30

40

50

60

70

80

I

t

d(off)

t

fi

- - - - - -