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BCR2AS-14A Datasheet(PDF) 2 Page - Renesas Technology Corp

Part # BCR2AS-14A
Description  Triac Low Power Use Non-Insulated Type Planar Passivation Type
PDF  7 Pages
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

BCR2AS-14A Datasheet(HTML) 2 Page - Renesas Technology Corp

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BCR2AS-14A
Preliminary
R07DS0257EJ0100 Rev.1.00
Page 2 of 6
Feb 28, 2011
Electrical Characteristics
Parameter
Symbol
Min.
Typ.
Max.
Unit
Test conditions
Repetitive peak off-state current
IDRM
—
—
1.0
mA
Tj = 125
C, V
DRM applied
On-state voltage
VTM
—
—
2.1
V
Tc = 25
C, I
TM = 3A,
instantaneous measurement
VFGT
—
—
2.0
V

VRGT
—
—
2.0
V
Gate trigger voltage
Note2

VRGT
—
—
2.0
V
Tj = 25
C, V
D = 6 V, RL = 6 ,
RG = 330 
IFGT
—
—
10
mA

IRGT
—
—
10
mA
Gate trigger curent
Note2

IRGT
—
—
10
mA
Tj = 25
C, V
D = 6 V, RL = 6 ,
RG = 330 
Gate non-trigger voltage
VGD
0.2
—
—
V
Tj = 125
C, V
D = 1/2 VDRM
Thermal resistance
Rth (j-c)
—
—
4.0
C/W
Junction to case
Note3
Critical-rate of rise of off-state
commutation voltage
Note4
(dv/dt)c
0.5
—
—
V/
s
Tj = 125
C
Notes: 2. Measurement using the gate trigger characteristics measurement circuit.
3. Case temperature is measured on the T2 tab.
4. Test conditions of the critical-rate of rise of off-state commutation voltage is shown in the table below.
Test conditions
Commutating voltage and current waveforms
(inductive load)
1. Junction temperature
Tj = 125
C
2. Rate of decay of on-state commutating current
(di/dt)c = –1.0 A/ms
3. Peak off-state voltage
VD = 400 V
Supply Voltage
Time
Time
Time
Main Current
Main Voltage
(di/dt)c
VD
(dv/dt)c



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