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1SS367 Datasheet(PDF) 1 Page - Shenzhen Ping Sheng Electronics Co., Ltd. |
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1SS367 Datasheet(HTML) 1 Page - Shenzhen Ping Sheng Electronics Co., Ltd. |
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1 / 3 page  1SS367 SILICON EPITAXIAL SCHOTTKY BARRIER DIODE Features • Low forward voltage Applications • High Speed Switching Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Maximum (Peak) Reverse Voltage VRM 15 V Reverse Voltage VR 10 V Average Forward Current IO 100 mA Maximum (Peak) Forward Current IFM 200 mA Surge Current (10 ms) IFSM 1 A Power Dissipation Ptot 200 mW Junction Temperature TJ 125 O C Operating Temperature Range Topr - 40 to + 100 O C Storage Temperature Range Ts - 55 to + 125 O C Characteristics at Ta = 25 OC Parameter Symbol Max. Unit Forward Voltage at IF = 5 mA at IF = 100 mA VF 0.3 0.5 V Reverse Current at VR = 10 V IR 20 µA Total Capacitance at f = 1 MHz CT 40 pF Anode 2 Top View Marking Code: "S3" Simplified outline SOD-323 and symbol 1 S3 2 PINNING 1 PIN Cathode DESCRIPTION |
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