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BSP613P Datasheet(PDF) 6 Page - Infineon Technologies AG |
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BSP613P Datasheet(HTML) 6 Page - Infineon Technologies AG |
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6 / 8 page ![]() 2007-02-08 Rev.2.4 Page 6 BSP613P 9 Drain-source on-state resistance RDS(on) = f (Tj) parameter : ID = -2.9 A, VGS = -10 V -60 -20 20 60 100 °C 180 Tj 0.00 0.04 0.08 0.12 0.16 0.20 0.24 0.28 W 0.34 BSP613P typ 98% 10 Gate threshold voltage VGS(th) = f (Tj) parameter: VGS = VDS, ID = -1 mA -60 -20 20 60 100 °C 180 Tj 0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 V -5.0 2% -60 -20 20 60 100 °C 180 Tj 0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 V -5.0 98% -60 -20 20 60 100 °C 180 Tj 0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 V -5.0 typ -60 -20 20 60 100 °C 180 Tj 0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 V -5.0 11 Typ. capacitances C = f (VDS) parameter: VGS=0V, f=1 MHz 0 -5 -10 -15 -20 -25 -30 V -40 VDS 1 10 2 10 3 10 4 10 pF Ciss Coss Crss 12 Forward characteristics of reverse diode IF = f (VSD) parameter: Tj , tp = 80 µs 0.0 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 V -3.0 VSD -1 -10 0 -10 1 -10 2 -10 A BSP613P T j = 25 °C typ T j = 25 °C (98%) T j = 150 °C typ T j = 150 °C (98%) |
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