2N3440CSM4R datasheet(2/2 Pages) SEME-LAB

Part #	2N3440CSM4R

Description	HIGH VOLTAGE, MEDIUM POWER, NPN TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS

PDF	2 Pages

Scroll/Zoom	100%

Manufacturer	SEME-LAB [Seme LAB]

Direct Link	http://www.semelab.co.uk

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Parameter

Test Conditions

Min.

Typ.

Max.

Unit

350

250

500

0.5

1.3

2N3439CSM4R

2N3440CSM4R

Prelim. 11/98

Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. e-mail sales@semelab.co.uk

Website http://www.semelab.co.uk

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

2N3439CSM4R

2N3440CSM4R

2N3439CSM4R

2N3440CSM4R

VCB = 360V 2N3439CSM4R

VCB = 250V 2N3440CSM4R

VCE = 300V 2N3439CSM4R

VCE = 200V 2N3440CSM4R

VEB = 6V

IC = 50mA

IB = 4mA

IC = 50mA

IB = 4mA

IC = 20mA

VCE = 10V

2N3439CSM4R only

IC = 20mA

VCE = 10V

ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)

VCEO(sus)* Collector – Emitter Sustaining Voltage

(IB = 0)

ICEX*

Collector Cut-off Current

(VBE = –1.5V)

ICBO*

Collector – Base Cut-off Current

(IE = 0)

ICEO*

Collector – Cut-off Current

(IB = 0)

IEBO*

Emitter Cut-off Current (IC = 0)

VCE(sat)*

Collector – Emitter Saturation Voltage

VBE(sat)*

Base – Emitter Saturation Voltage

hFE*

DC Current Gain

—

Transition Frequency

Cob

Output Capacitance

hfe

Small Signal Current Gain

IC = 10mA

VCE = 10V

f = 5MHz

VCB = 10V

f = 10MHz

IC = 5mA

VCE = 10V

f = 1kHz

MHz

* Pulse test tp = 300ms , d £ 2%

DYNAMIC CHARACTERISTICS (Tcase = 25°C unless otherwise stated)

IC = 50mA

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