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2SB1068 Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH

Part # 2SB1068
Description  PNP Plastic Encapsulated Transistor
PDF  1 Pages
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Manufacturer  SECOS [SeCoS Halbleitertechnologie GmbH]
Direct Link  http://www.secosgmbh.com
Logo SECOS - SeCoS Halbleitertechnologie GmbH

2SB1068 Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH

  2SB1068 Datasheet HTML 1Page - SeCoS Halbleitertechnologie GmbH  
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2SB1068
-2A , -20V
PNP Plastic Encapsulated Transistor
Elektronische Bauelemente
14-Feb-2011 Rev. A
Page 1 of 1
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.

Base

Emitter
Collector

A
C
E
K
F
D
B
G
H
J
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Low Collector Saturation Voltage
High DC Current Gain
High Collector Power Dissipation
Complementary of the 2SD1513
CLASSIFICATION OF hFE (1)
Product-Rank
2SB1068-L
2SB1068-K
2SB1068-U
Range
135~270
200~400
300~650
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Rating
Unit
Collector to Base Voltage
VCBO
-20
V
Collector to Emitter Voltage
VCEO
-16
V
Emitter to Base Voltage
VEBO
-6
V
Collector Current - Continuous
IC
-2
A
Collector Power Dissipation
PC
0.625
W
Thermal Resistance From Junction to Ambient
RθJA
200
°C / W
Junction, Storage Temperature
TJ, TSTG
150, -55~150
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Min
Typ
Max
Unit
Test condition
Collector to Base Breakdown Voltage
V(BR)CBO
-20
-
-
V
IC= -0.1mA, IE=0
Collector to Emitter Breakdown Voltage
V(BR)CEO
-16
-
-
V
IC= -1mA, IB=0
Emitter to Base Breakdown Voltage
V(BR)EBO
-6
-
-
V
IE= -0.1mA, IC=0
Collector Cut-Off Current
ICBO
-
-
-0.1
μA
VCB= -16V, IE=0
Emitter Cut-Off Current
IEBO
-
-
-0.1
μA
VEB= -6V, IC=0
DC Current Gain
hFE(1)
135
-
650
VCE= -2V, IC= -0.1A
hFE(2)
100
-
-
VCE= -2V, IC= -1.5A
Collector to Emitter Saturation Voltage
VCE(sat)1
-
-
-0.4
V
IC= -1A, IB= -10mA
VCE(sat)2
-
-
-0.5
V
IC= -1.5A, IB= -20mA
VCE(sat)3
-
-
-0.5
V
IC= -1.5A, IB= -75mA
Base to Emitter Saturation Voltage
VBE(sat)
-
-
-1.2
V
IC= -1.5A, IB= -75mA
Base to Emitter voltage
VBE
-0.55
-
-0.65
V
VCE= -6V, IC= -5mA
Collector-Base Capacitance
Ccb
-
60
-
pF
VCB= -10V, IE=0, f=1MHz
Transition Frequency
fT
100
-
-
MHz
VCE= -10V, IC = -50mA
TO-92
Emitter
Collector
Base
REF.
Millimeter
Min.
Max.
A
4.40
4.70
B
4.30
4.70
C
12.70
-
D
3.30
3.81
E
0.36
0.56
F
0.36
0.51
G
1.27 TYP.
H
1.10
-
J
2.42
2.66
K
0.36
0.76


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