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2SC4672 Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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2SC4672 Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 2 page  2SC4672 500 mW, 60 V NPN Plastic-Encapsulate Transistor Elektronische Bauelemente 09-Mar-2010 Rev. B Page 1 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. A E C D B K H F G L J 1 2 3 4 Base Emitter Collector RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES Low saturation voltage, typically VCE(SAT)=0.1V at IC/IB=1A/50mA. Excellent DC current gain characteristics. Complements the 2SA1797 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) PARAMETER SYMBOL RATING UNIT Collector to Base Voltage VCBO 60 V Collector to Emitter Voltage VCEO 50 V Emitter to Base Voltage VEBO 6 V Continuous Collector Current IC 2 A Collector Power Dissipation PC 500 mW Junction, Storage Temperature TJ, TSTG 150, -55~150 °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) PARAMETER SYMBOL MIN TYP MAX UNIT TEST CONDITION Collector to Base Breakdown Voltage V(BR)CBO 60 - - V IC=50μA, IE = 0 Collector to Emitter Breakdown Voltage V(BR)CEO 50 - - V IC=1mA, IB = 0 Emitter to Base Breakdown Voltage V(BR)EBO 6 - - V IE=50μA, IC = 0 Collector Cut-Off Current ICBO - - 0.1 μA VCB=60 V, IE = 0 Emitter Cut-Off Current IEBO - 0.1 μA VEB=5 V, IC = 0 DC Current Gain hFE 82 - 270 VCE=2V, IC=0.5A Collector to Emitter Saturation Voltage VCE(sat) - - 0.35 V IC=1A, IB=50mA Transition Frequency fT - 210 - MHz VCE = 2V, IC = 500mA, f = 100 MHz Collector Output Capacitance Cob - 25 - pF VCB = 10V, IE = 0 , f=1MHz CLASSIFICATION OF hFE Rank P Q Range 82~180 120~270 Marking DKP DKQ SOT-89 REF. Millimeter REF. Millimeter Min. Max. Min. Max. A 4.40 4.60 G 0.40 0.58 B 3.94 4.25 H 1.50 TYP C 1.40 1.60 J 3.00 TYP D 2.30 2.60 K 0.32 0.52 E 1.50 1.70 L 0.35 0.44 F 0.89 1.20 |
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