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BAS40T Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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BAS40T Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 2 page  BAS40T/BAS40-04T/ BAS40-05T/BAS40-06T VOLTAGE 40 V, 200 mA Surface Mount Schottky Barrier Rectifiers Elektronische Bauelemente 14-Oct-2009 Rev. C Page 1 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES Low Turn-on voltage Fast switching BAS40T Marking: 43 BAS40-04T Marking: 44 BAS40-05T Marking: 45 BAS40-06T Marking: 46 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating 25°C ambient temperature unless otherwise specified. TYPE NUMBER SYMBOL VALUES UNITS Peak Repetitive Peak reverse voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 40 V Forward Continuous Current IFM 200 mA Non-Repetitive Peak Forward Surge Current @ t = 1.0s IFSM 0.6 A Average Rectified Output Current IO 200 mA Power Dissipation PD 150 mW Thermal Resistance Junction to Ambient Air RθJA 833 ℃ /W Operating Junction Temperature (Max.) TJ 125 ℃ Storage temperature TSTG -65~125 ℃ MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating 25°C ambient temperature unless otherwise specified. PARAMETERS SYMBOL TEST CONDITIONS MIN MAX UNITS Reverse breakdown voltage V(BR)R IR= 10µA 40 V Forward voltage VF IF=1mA IF=40mA 380 1000 mV Reverse voltage leakage current IR VR=30V 0.2 A Diode capacitance CD VR=0, f=1MHz 5 pF Reveres recovery time trr IF=IR=10mA,Irr=0.1xIR, RL=100Ω 5 nS Top View A L M C B D G H J F K E 1 2 3 1 2 3 REF. Millimeter REF. Millimeter Min. Max. Min. Max. A 1.5 1.7 G - 0.1 B 1.45 1.75 H 0.55 REF. C 0.75 0.85 J 0.1 0.2 D 0.7 0.9 K - E 0.9 1.1 L 0.5 TYP. F 0.15 0.25 M 0.25 0.325 SOT-523 |
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