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D2003 Datasheet(PDF) 2 Page - Seme LAB

Part # D2003
Description  METAL GATE RF SILICON FET
PDF  4 Pages
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Manufacturer  SEME-LAB [Seme LAB]
Direct Link  http://www.semelab.co.uk
Logo SEME-LAB - Seme LAB

D2003 Datasheet(HTML) 2 Page - Seme LAB

  D2003 Datasheet HTML 1Page - Seme LAB D2003 Datasheet HTML 2Page - Seme LAB D2003 Datasheet HTML 3Page - Seme LAB D2003 Datasheet HTML 4Page - Seme LAB  
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D2003UK
Prelim.01/01
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
65
1
1
17
0.18
13
40
20:1
12
6
0.5
VGS = 0
ID = 10mA
VDS = 28V
VGS = 0
VGS = 20V
VDS = 0
ID = 10mA
VDS = VGS
VDS = 10V
ID = 1A
PO = 5W
VDS = 28V
IDQ = 0.2A
f = 1GHz
VDS = 28V
VGS = –5V f = 1MHz
VDS = 28V
VGS = 0
f = 1MHz
VDS = 28V
VGS = 0
f = 1MHz
V
mA
mA
V
S
dB
%
pF
pF
pF
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Drain–Source Breakdown
Voltage
Zero Gate Voltage
Drain Current
Gate Leakage Current
Gate Threshold Voltage*
Forward Transconductance*
Common Source Power Gain
Drain Efficiency
Load Mismatch Tolerance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
HAZARDOUS MATERIAL WARNING
The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly
toxic and care must be taken during handling and mounting to avoid damage to this area.
THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE.
RTHj–case
Thermal Resistance Junction – Case
Max. 5.0°C / W
THERMAL DATA
* Pulse Test:
Pulse Duration = 300
ms , Duty Cycle £ 2%
TOTAL DEVICE
PER SIDE
PER SIDE
BVDSS
IDSS
IGSS
VGS(th)
gfs
GPS
h
VSWR
Ciss
Coss
Crss



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