Symbol

V

DSS

I

D

I

DM

V

GS

V

GSM

P

D

T

T

L

I

AR

E

AR

E

AS

STATIC ELECTRICAL CHARACTERISTICS

MAXIMUM RATINGS

All Ratings: T

CAUTION:

These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

Characteristic / Test Conditions / Part Number

Drain-Source Breakdown Voltage (V

Zero Gate Voltage Drain Current (V

Zero Gate Voltage Drain Current (V

Gate-Source Leakage Current (V

Gate Threshold Voltage (V

MIN

TYP

MAX

500

58

0.09

25

250

±100

2

4

UNIT

Volts

Amps

Ohms

μA

nA

Volts

Symbol

BV

DSS

I

R

I

DSS

I

GSS

V

LINEAR MOSFET

Linear Mosfets are optimized for applications operating in the Linear

region where concurrent high voltage and high current can occur at

near DC conditions (>100 msec).

• Higher FBSOA

• Higher Power Dissipation

Parameter

Drain-Source Voltage

Continuous Drain Current @ T

Gate-Source Voltage Continuous

Gate-Source Voltage Transient

Total Power Dissipation @ T

Linear Derating Factor

Operating and Storage Junction Temperature Range

Lead Temperature: 0.063" from Case for 10 Sec.

UNIT

Volts

Amps

Volts

Watts

W/°C

°C

Amps

mJ

APL502B2_L (G)

500

58

232

±30

±40

730

5.84

-55 to 150

300

58

50

3000

T-Max

TM

TO-264

G

D

S

Microsemi Website - http://www.microsemi.com

APL502B2(G)

APL502L(G)

500V, 58A, 0.090

Ω

*G Denotes RoHS Compliant, Pb Free Terminal Finish.