APT18M100B_09 datasheet(3/4 Pages) MICROSEMI

3 / 4 page

= 6, 7, 8 & 9V

4.5V

= 125°C

= 25°C

= -55°C

= 10V

> I

D(ON)

x R

DS(ON)

MAX.

250µSEC. PULSE TEST

@ <0.5 % DUTY CYCLE

NORMALIZED TO

= 10V @ 9A

= 125°C

= 25°C

= -55°C

oss

iss

= 9A

DS =

960V

DS =

240V

DS =

600V

= 150°C

= 25°C

= 125°C

= 150°C

rss

= 125°C

= 25°C

= -55°C

DS(ON)

, DRAIN-TO-SOURCE VOLTAGE (V)

Figure 1, Output Characteristics

Figure 2, Output Characteristics

, JUNCTION TEMPERATURE (°C)

, GATE-TO-SOURCE VOLTAGE (V)

Figure 3, R

DS(ON)

vs Junction Temperature

Figure 4, Transfer Characteristics

, DRAIN CURRENT (A)

, DRAIN-TO-SOURCE VOLTAGE (V)

Figure 5, Gain vs Drain Current

Figure 6, Capacitance vs Drain-to-Source Voltage

, TOTAL GATE CHARGE (nC)

, SOURCE-TO-DRAIN VOLTAGE (V)

Figure 7, Gate Charge vs Gate-to-Source Voltage

Figure 8, Reverse Drain Current vs Source-to-Drain Voltage

-55

-25

100 125 150

200

400

600

800

1000

20 40

60 80 100 120 140 160 180 200

0.2

0.4

0.6

0.8

1.0

1.2

3.0

2.5

2.0

1.5

1.0

0.5

10,000

1,000

100

APT18M100B_S

APT18M100B Datasheet(PDF) 3 Page - Microsemi Corporation

APT18M100B Datasheet(HTML) 3 Page - Microsemi Corporation

Html Pages

1 2 3 4

Datasheet Download

Link URL