Microsemi's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786

5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.

TO-247(B)PackageOutline

e3 100% Sn Plated

15.49 (.610)

16.26 (.640)

5.38 (.212)

6.20 (.244)

6.15 (.242) BSC

4.50 (.177) Max.

19.81 (.780)

20.32 (.800)

20.80 (.819)

21.46 (.845)

1.65 (.065)

2.13 (.084)

1.01 (.040)

1.40 (.055)

3.50 (.138)

3.81 (.150)

2.87 (.113)

3.12 (.123)

4.69 (.185)

5.31 (.209)

1.49 (.059)

2.49 (.098)

2.21 (.087)

2.59 (.102)

0.40 (.016)

0.79 (.031)

Drain

Source

Gate

5.45 (.215) BSC

Dimensions in Millimeters and (Inches)

2-Plcs.

15.95 (.628)

16.05(.632)

1.22 (.048)

1.32 (.052)

5.45 (.215) BSC

{2 Plcs.}

4.98 (.196)

5.08 (.200)

1.47 (.058)

1.57 (.062)

2.67 (.105)

2.84 (.112)

0.46 (.018) {3 Plcs}

0.56 (.022)

Dimensions in Millimeters (Inches)

HeatSink(Drain)

and Leads

are Plated

3.81 (.150)

4.06 (.160)

(Base of Lead)

1.98 (.078)

2.08 (.082)

Gate

Drain

Source

0.020 (.001)

0.178 (.007)

1.27 (.050)

1.40 (.055)

11.51 (.453)

11.61 (.457)

13.41 (.528)

13.51(.532)

Revised

8/29/97

1.04 (.041)

1.15(.045)

13.79 (.543)

13.99(.551)

Revised

4/18/95

1ms

100ms

Rds(on)

0.5

SINGLE PULSE

0.1

0.3

0.7

0.05

D = 0.9

Scaling for Different Case & Junction

Temperatures:

I

Peak TJ = PDM x ZθJC + TC

Duty Factor D =

t2

t1

Note:

DC line

100µs

I

DM

10ms

13µs

100µs

I

DM

100ms

10ms

13µs

Rds(on)

DC line

T

T

1ms

T

T

V

V

Figure9,ForwardSafeOperatingArea

Figure10,MaximumForwardSafeOperatingArea

1.0

RECTANGULAR PULSE DURATION (seconds)

Figure11.MaximumEffectiveTransientThermalImpedanceJunction-to-CasevsPulseDuration

1

10

100

800

1

10

100

800

200

100

10

1

0.1

0.25

0.20

0.15

0.10

0.05

0

200

100

10

1

0.1

APT37F50B_S