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APT51M50J Datasheet(PDF) 4 Page - Microsemi Corporation |
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APT51M50J Datasheet(HTML) 4 Page - Microsemi Corporation |
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4 / 4 page ![]() 31.5 (1.240) 31.7 (1.248) Dimensions in Millimeters and (Inches) 7.8 (.307) 8.2 (.322) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504) 14.9 (.587) 15.1 (.594) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places) 0.75 (.030) 0.85 (.033) 12.6 (.496) 12.8 (.504) 25.2 (0.992) 25.4 (1.000) 1.95 (.077) 2.14 (.084) * Source Drain Gate * r = 4.0 (.157) (2 places) 4.0 (.157) 4.2 (.165) (2 places) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 3.3 (.129) 3.6 (.143) * Source Emitter terminals are shorted internally. Current handling capability is equal for either Source terminal. SOT-227 (ISOTOP®) Package Outline ISOTOP ® is a registered trademark of ST Microelectronics NV. Microsemi's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved. 1ms 100ms Rds(on) DC line 100µs I DM 10ms 13µs 100µs I DM 100ms 10ms 13µs Rds(on) DC line 1ms 0.5 SINGLE PULSE 0.1 0.3 0.7 0.05 D = 0.9 Scaling for Different Case & Junction Temperatures: I D = I D(T C = 25 °C)*(TJ - TC)/125 Peak TJ = PDM x ZθJC + TC Duty Factor D = t1/t 2 t2 t1 Note: t1 = Pulse Duration T J = 150°C T C = 25°C V DS , DRAIN-TO-SOURCE VOLTAGE (V) V DS , DRAIN-TO-SOURCE VOLTAGE (V) Figure 9, Forward Safe Operating Area Figure 10, Maximum Forward Safe Operating Area 10-5 10-4 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (seconds) Figure 11. Maximum Effective Transient Thermal Impedance Junction-to-Case vs Pulse Duration 1 10 100 800 1 10 100 800 0.30 0.25 0.20 0.15 0.10 0.05 0 300 100 10 1 0.1 300 100 10 1 0.1 APT51M50J T J = 125°C T C = 75°C |
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