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APT51M50J Datasheet(PDF) 4 Page - Microsemi Corporation

Part # APT51M50J
Description  N-Channel MOSFET
PDF  4 Pages
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Manufacturer  MICROSEMI [Microsemi Corporation]
Direct Link  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

APT51M50J Datasheet(HTML) 4 Page - Microsemi Corporation

  APT51M50J_09 Datasheet HTML 1Page - Microsemi Corporation APT51M50J_09 Datasheet HTML 2Page - Microsemi Corporation APT51M50J_09 Datasheet HTML 3Page - Microsemi Corporation APT51M50J_09 Datasheet HTML 4Page - Microsemi Corporation  
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31.5 (1.240)
31.7 (1.248)
Dimensions in Millimeters and (Inches)
7.8 (.307)
8.2 (.322)
30.1 (1.185)
30.3 (1.193)
38.0 (1.496)
38.2 (1.504)
14.9 (.587)
15.1 (.594)
11.8 (.463)
12.2 (.480)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
0.75 (.030)
0.85 (.033)
12.6 (.496)
12.8 (.504)
25.2 (0.992)
25.4 (1.000)
1.95 (.077)
2.14 (.084)
* Source
Drain
Gate
*
r = 4.0 (.157)
(2 places)
4.0 (.157)
4.2 (.165)
(2 places)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
3.3 (.129)
3.6 (.143)
* Source
Emitter terminals are shorted
internally. Current handling
capability is equal for either
Source terminal.
SOT-227 (ISOTOP®) Package Outline
ISOTOP
® is a registered trademark of ST Microelectronics NV. Microsemi's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234
5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
1ms
100ms
Rds(on)
DC line
100µs
I
DM
10ms
13µs
100µs
I
DM
100ms
10ms
13µs
Rds(on)
DC line
1ms
0.5
SINGLE PULSE
0.1
0.3
0.7
0.05
D = 0.9
Scaling for Different Case & Junction
Temperatures:
I
D
= I
D(T
C
= 25
°C)*(TJ - TC)/125
Peak TJ = PDM x ZθJC + TC
Duty Factor D =
t1/t
2
t2
t1
Note:
t1 = Pulse Duration
T
J
= 150°C
T
C
= 25°C
V
DS
, DRAIN-TO-SOURCE VOLTAGE (V)
V
DS
, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 9, Forward Safe Operating Area
Figure 10, Maximum Forward Safe Operating Area
10-5
10-4
10-3
10-2
10-1
1.0
RECTANGULAR PULSE DURATION (seconds)
Figure 11. Maximum Effective Transient Thermal Impedance Junction-to-Case vs Pulse Duration
1
10
100
800
1
10
100
800
0.30
0.25
0.20
0.15
0.10
0.05
0
300
100
10
1
0.1
300
100
10
1
0.1
APT51M50J
T
J
= 125°C
T
C
= 75°C



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