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APT84M50B2 Datasheet(PDF) 3 Page - Microsemi Corporation

Part # APT84M50B2
Description  N-Channel MOSFET
PDF  4 Pages
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Manufacturer  MICROSEMI [Microsemi Corporation]
Direct Link  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

APT84M50B2 Datasheet(HTML) 3 Page - Microsemi Corporation

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V
GS
= 7,8 & 10V
T
J
= 125°C
T
J
= 25°C
T
J
= -55°C
V
GS
= 10V
6V
V
DS
> I
D(ON)
x R
DS(ON)
MAX.
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
NORMALIZED TO
V
GS
= 10V @ 42A
T
J
= 125°C
T
J
= 25°C
T
J
= -55°C
C
oss
C
iss
I
D
= 42A
V
DS =
400V
V
DS =
100V
V
DS =
250V
T
J
= 125°C
T
J
= 25°C
T
J
= -55°C
T
J
= 150°C
T
J
= 25°C
T
J
= 125°C
T
J
= 150°C
C
rss
5V
4.5V
V
DS(ON)
, DRAIN-TO-SOURCE VOLTAGE (V)
V
DS
, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 1, Output Characteristics
Figure 2, Output Characteristics
T
J
, JUNCTION TEMPERATURE (°C)
V
GS
, GATE-TO-SOURCE VOLTAGE (V)
Figure 3, R
DS(ON)
vs Junction Temperature
Figure 4, Transfer Characteristics
I
D
, DRAIN CURRENT (A)
V
DS
, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 5, Gain vs Drain Current
Figure 6, Capacitance vs Drain-to-Source Voltage
Q
g
, TOTAL GATE CHARGE (nC)
V
SD
, SOURCE-TO-DRAIN VOLTAGE (V)
Figure 7, Gate Charge vs Gate-to-Source Voltage
Figure 8, Reverse Drain Current vs Source-to-Drain Voltage
0
5
10
15
20
25
0
5
10
15
20
25
30
-55
-25
0
25
50
75
100 125 150
0
1
2
3
4
5
6
7
8
0
10
20
30
40
50
60
70
80
90
0
100
200
300
400
500
0
100
200
300
400
500
0
0.3
0.6
0.9
1.2
1.5
350
300
250
200
150
100
50
0
2.5
2.0
1.5
1.0
0.5
0
120
100
80
60
40
20
0
16
14
12
10
8
6
4
2
0
160
140
120
100
80
60
40
20
0
280
240
200
160
120
80
40
0
20,000
10,000
1000
100
10
280
240
200
160
120
80
40
0
APT84M50B2_L



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