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MMBD4448F Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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MMBD4448F Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 2 page ![]() Elektronische Bauelemente MMBD4448F Plastic-Encapsulated Switching Diode 25-Dec-2009 Rev. A Page 1 of 2 Top View A L C B D G H J F K E 1 2 3 1 2 3 RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION Fast switching speed For general purpose switching applications High conductance Surface mount package ideally suited for automatic insertion MARKING: KA3 ABSOLUTE MAXIMUM RATINGS (T A = 25°C unless otherwise specified) PARAMETER SYMBOL VALUE UNIT Non-Repetitive Peak Reverse Voltage VRM 100 V Peak Repetitive Reverse Voltage VRRM 75 V Working Peak Reverse Voltage VRWM 75 V DC Blocking Voltage VR 75 V RMS Reverse Voltage VR(RMS) 53 V Forward Continuous Current IFM 500 mA Average Rectified Output Current IO 250 mA @ t = 1.0µs 4.0 Peak Forward Surge Current @ t = 1.0s IFSM 1.5 A Power Dissipation PD 200 mW Thermal Resistance Junction to Ambient R θJA 625 °C/ W Storage Temperature TSTG -65~150 °C ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise specified) PARAMETER SYMBOL MIN. MAX. UNIT TEST CONDITION VF1 0.62 0.720 V IF = 5mA VF2 - 0.855 V IF = 10mA VF3 - 1.00 V IF = 100mA Forward Voltage VF4 - 1.25 V IF = 150mA IR1 - 2.5 µA VR = 75V Reverse Current IR2 - 25 nA VR = 20V Capacitance Between Terminals CT - 4 pF VR = 0V, f = 1MHz Reverse Recovery Time tRR - 4 nS IF = IR = 10mA, Irr = 0.1 x IR RL =100 SOT-323 Millimeter Millimeter REF. Min. Max. REF. Min. Max. A 1.05 REF. E 0.080 0.180 B 0.20 REF. F 1.15 1.45 C 0.80 1.00 G 1.60 1.80 D 0.25 0.40 H 2.30 2.70 3 2 1 |
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