Any changing of specification will not be informed individual

MMBT2222A

NPN Silicon

General Purpose Transistor

Characteristic

Symbol

Min

Max

Unit

ON CHARACTERISTICS

DC Current Gain

(IC = 0.1 mAdc, VCE = 10 Vdc)

(IC = 1.0 mAdc, VCE = 10 Vdc)

(IC = 10 mAdc, VCE = 10 Vdc)

(IC = 10 mAdc, VCE = 10 Vdc, TA = –55°C)

MMBT2222A only

(IC = 150 mAdc, VCE = 10 Vdc) (3)

(IC = 150 mAdc, VCE = 1.0 Vdc) (3)

(IC = 500 mAdc, VCE = 10 Vdc) (3)

MMBT2222

MMBT2222A

hFE

35

50

75

35

100

50

30

40

—

—

—

—

300

—

—

—

—

Collector – Emitter Saturation Voltage (3)

(IC = 150 mAdc, IB = 15 mAdc)

MMBT2222

MMBT2222A

(IC = 500 mAdc, IB = 50 mAdc)

MMBT2222

MMBT2222A

VCE(sat)

—

—

—

—

0.4

0.3

1.6

1.0

Vdc

Base – Emitter Saturation Voltage (3)

(IC = 150 mAdc, IB = 15 mAdc)

MMBT2222

MMBT2222A

(IC = 500 mAdc, IB = 50 mAdc)

MMBT2222

MMBT2222A

VBE(sat)

—

0.6

—

—

1.3

1.2

2.6

2.0

Vdc

SMALL– SIGNAL CHARACTERISTICS

Current – Gain — Bandwidth Product (4)

(IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz)

MMBT2222

MMBT2222A

fT

250

300

—

—

MHz

Output Capacitance

(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)

Cobo

—

8.0

pF

Input Capacitance

(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)

MMBT2222

MMBT2222A

Cibo

—

—

30

25

pF

Input Impedance

(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)

MMBT2222A

(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz)

MMBT2222A

hie

2.0

0.25

8.0

1.25

k

Ω

Voltage Feedback Ratio

(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)

MMBT2222A

(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz)

MMBT2222A

hre

—

—

8.0

4.0

X 10–4

Small – Signal Current Gain

(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)

MMBT2222A

(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz)

MMBT2222A

hfe

50

75

300

375

—

Output Admittance

(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)

MMBT2222A

(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz)

MMBT2222A

hoe

5.0

25

35

200

mmhos

Collector Base Time Constant

(IE = 20 mAdc, VCB = 20 Vdc, f = 31.8 MHz)

MMBT2222A

rb, Cc

—

150

ps

Noise Figure

(IC = 100 mAdc, VCE = 10 Vdc, RS = 1.0 kΩ, f = 1.0 kHz)

MMBT2222A

NF

—

4.0

dB

SWITCHING CHARACTERISTICS (MMBT2222A only)

Delay Time

(VCC = 30 Vdc, VBE(off) = – 0.5 Vdc,

td

—

10

ns

Rise Time

( CC

,

BE(off)

,

IC = 150 mAdc, IB1 = 15 mAdc)

tr

—

25

ns

Storage Time

(VCC = 30 Vdc, IC = 150 mAdc,

ts

—

225

ns

Fall Time

( CC

, C

,

IB1 = IB2 = 15 mAdc)

tf

—

60

ns

3. Pulse Test: Pulse Width

v 300 ms, Duty Cycle v 2.0%.

4. fT is defined as the frequency at which |hfe| extrapolates to unity.

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Elektronische Bauelemente

01-Jun-2002 Rev. A

Page 2 of 5