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MMBT2907A Datasheet(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH |
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MMBT2907A Datasheet(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH |
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2 / 4 page ![]() Any changing of specification will not be informed individual MMBT2907A PNP Silicon General Purpose Transistor ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Max Unit ON CHARACTERISTICS DC Current Gain (IC = –0.1 mAdc, VCE = –10 Vdc) MMBT2907 MMBT2907A (IC = –1.0 mAdc, VCE = –10 Vdc) MMBT2907 MMBT2907A (IC = –10 mAdc, VCE = –10 Vdc) MMBT2907 MMBT2907A (IC = –150 mAdc, VCE = –10 Vdc) (3) MMBT2907 MMBT2907A (IC = –500 mAdc, VCE = –10 Vdc) (3) MMBT2907 MMBT2907A hFE 35 75 50 100 75 100 — 100 30 50 — — — — — — — 300 — — — Collector – Emitter Saturation Voltage (3) (IC = –150 mAdc, IB = –15 mAdc) (IC = –500 mAdc, IB = –50 mAdc) VCE(sat) — — –0.4 –1.6 Vdc Base – Emitter Saturation Voltage (3) (IC = –150 mAdc, IB = –15 mAdc) (IC = –500 mAdc, IB = –50 mAdc) VBE(sat) — — –1.3 –2.6 Vdc SMALL– SIGNAL CHARACTERISTICS Current – Gain — Bandwidth Product (3),(4) (IC = –50 mAdc, VCE = –20 Vdc, f = 100 MHz) fT 200 — MHz Output Capacitance (VCB = –10 Vdc, IE = 0, f = 1.0 MHz) Cobo — 8.0 pF Input Capacitance (VEB = –2.0 Vdc, IC = 0, f = 1.0 MHz) Cibo — 30 pF SWITCHING CHARACTERISTICS Turn–On Time (V 30 Vdc I 150 mAdc ton — 45 Delay Time (VCC = –30 Vdc, IC = –150 mAdc, IB1 = –15 mAdc) td — 10 ns Rise Time IB1 = 15 mAdc) tr — 40 Turn–Off Time (V 6 0 Vdc I 150 mAdc toff — 100 Storage Time (VCC = –6.0 Vdc, IC = –150 mAdc, IB1 = IB2 = –15 mAdc) ts — 80 ns Fall Time IB1 = IB2 = 15 mAdc) tf — 30 3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. 4. fT is defined as the frequency at which |hfe| extrapolates to unity. 0 0 –16 V 200 ns 50 1.0 k 200 –30 V TO OSCILLOSCOPE RISE TIME ≤ 5.0 ns +15 V –6.0 V 1.0 k 37 50 1N916 1.0 k 200 ns –30 V TO OSCILLOSCOPE RISE TIME ≤ 5.0 ns INPUT Zo = 50 Ω PRF = 150 PPS RISE TIME ≤ 2.0 ns P.W. < 200 ns INPUT Zo = 50 Ω PRF = 150 PPS RISE TIME ≤ 2.0 ns P.W. < 200 ns Figure 1. Delay and Rise Time Test Circuit Figure 2. Storage and Fall Time Test Circuit http://www.SeCoSGmbH.com Elektronische Bauelemente 01-Jun-2002 Rev. A Page 2 of 4 |
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