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MMBT2907A Datasheet(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH

Part # MMBT2907A
Description  General Purpose Transistor
PDF  4 Pages
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Manufacturer  SECOS [SeCoS Halbleitertechnologie GmbH]
Direct Link  http://www.secosgmbh.com
Logo SECOS - SeCoS Halbleitertechnologie GmbH

MMBT2907A Datasheet(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH

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Any changing of specification will not be informed individual
MMBT2907A
PNP Silicon
General Purpose Transistor
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
ON CHARACTERISTICS
DC Current Gain
(IC = –0.1 mAdc, VCE = –10 Vdc)
MMBT2907
MMBT2907A
(IC = –1.0 mAdc, VCE = –10 Vdc)
MMBT2907
MMBT2907A
(IC = –10 mAdc, VCE = –10 Vdc)
MMBT2907
MMBT2907A
(IC = –150 mAdc, VCE = –10 Vdc) (3)
MMBT2907
MMBT2907A
(IC = –500 mAdc, VCE = –10 Vdc) (3)
MMBT2907
MMBT2907A
hFE
35
75
50
100
75
100
—
100
30
50
—
—
—
—
—
—
—
300
—
—
—
Collector – Emitter Saturation Voltage (3)
(IC = –150 mAdc, IB = –15 mAdc)
(IC = –500 mAdc, IB = –50 mAdc)
VCE(sat)
—
—
–0.4
–1.6
Vdc
Base – Emitter Saturation Voltage (3)
(IC = –150 mAdc, IB = –15 mAdc)
(IC = –500 mAdc, IB = –50 mAdc)
VBE(sat)
—
—
–1.3
–2.6
Vdc
SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product (3),(4)
(IC = –50 mAdc, VCE = –20 Vdc, f = 100 MHz)
fT
200
—
MHz
Output Capacitance
(VCB = –10 Vdc, IE = 0, f = 1.0 MHz)
Cobo
—
8.0
pF
Input Capacitance
(VEB = –2.0 Vdc, IC = 0, f = 1.0 MHz)
Cibo
—
30
pF
SWITCHING CHARACTERISTICS
Turn–On Time
(V
30 Vdc I
150 mAdc
ton
—
45
Delay Time
(VCC = –30 Vdc, IC = –150 mAdc,
IB1 = –15 mAdc)
td
—
10
ns
Rise Time
IB1 = 15 mAdc)
tr
—
40
Turn–Off Time
(V
6 0 Vdc I
150 mAdc
toff
—
100
Storage Time
(VCC = –6.0 Vdc, IC = –150 mAdc,
IB1 = IB2 = –15 mAdc)
ts
—
80
ns
Fall Time
IB1 = IB2 = 15 mAdc)
tf
—
30
3. Pulse Test: Pulse Width
v 300 ms, Duty Cycle v 2.0%.
4. fT is defined as the frequency at which |hfe| extrapolates to unity.
0
0
–16 V
200 ns
50
1.0 k
200
–30 V
TO OSCILLOSCOPE
RISE TIME
≤ 5.0 ns
+15 V
–6.0 V
1.0 k
37
50
1N916
1.0 k
200 ns
–30 V
TO OSCILLOSCOPE
RISE TIME
≤ 5.0 ns
INPUT
Zo = 50 Ω
PRF = 150 PPS
RISE TIME
≤ 2.0 ns
P.W. < 200 ns
INPUT
Zo = 50 Ω
PRF = 150 PPS
RISE TIME
≤ 2.0 ns
P.W. < 200 ns
Figure 1. Delay and Rise Time Test Circuit
Figure 2. Storage and Fall Time Test Circuit
http://www.SeCoSGmbH.com
Elektronische Bauelemente
01-Jun-2002 Rev. A
Page 2 of 4



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