MMBT2907Q datasheet(3/3 Pages) SECOS

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Any changing of specification will not be informed individual

MMBT2907Q

PNP Silicon

General Purpose Transistor

TYPICAL SMALL– SIGNAL CHARACTERISTICS

NOISE FIGURE

VCE = 10 Vdc, TA = 25°C

Figure 7. Frequency Effects

f, Frequency (kHz)

0.01

Figure 8. Source Resistance Effects

Rs, Source Resistance (OHMS)

f = 1.0 kHz

IC = –50 µA

–100

µA

–500

µA

–1.0 mA

Rs = OPTIMUM SOURCE RESISTANCE

8.0

6.0

4.0

2.0

0.02 0.05 0.1 0.2

0.5 1.0 2.0

5.0 10

100

8.0

6.0

4.0

2.0

100

200

500 1.0 k

2.0 k

5.0 k 10 k

20 k

50 k

IC = –1.0 mA, Rs = 430 Ω

–500

µA, Rs = 560 Ω

–50

µA, Rs = 2.7 kΩ

–100

µA, Rs = 1.6 kΩ

Figure 9. Capacitances

Reverse Voltage (VOLTS)

Figure 10. Current–Gain — Bandwidth Product

IC, Collector Current (mA)

–0.1

2.0

Figure 11. “On” Voltage

IC, Collector Current (mA)

–1.0

Figure 12. Temperature Coefficients

IC, Collector Current (mA)

TJ = 25°C

VBE(sat) @ IC/IB = 10

VCE(sat) @ IC/IB = 10

VBE(on) @ VCE = –10 V

RqVC for VCE(sat)

7.0

5.0

3.0

–0.2 –0.3 –0.5

–1.0

–2.0 –3.0 –5.0

–10

–20 –30

400

300

200

100

–1.0 –2.0

–5.0

–10

–20

–50

–100 –200

–500 –1000

–0.8

–0.6

–0.4

–0.2

–0.1 –0.2

–0.5 –1.0 –2.0 –5.0 –10 –20

–50 –100 –200

–500

+0.5

–0.5

–1.0

–1.5

–2.0

–2.5

–0.1 –0.2

–0.5 –1.0 –2.0

–5.0 –10 –20

–50 –100 –200 –500

Ceb

Ccb

VCE = –20 V

TJ = 25°C

RqVB for VBE

http://www.SeCoSGmbH.com

Elektronische Bauelemente

01-Jun-2002 Rev. A

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