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VRF154FLMP Datasheet(PDF) 2 Page - Microsemi Corporation

Part # VRF154FLMP
Description  RF POWER VERTICAL MOSFET
PDF  5 Pages
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Manufacturer  MICROSEMI [Microsemi Corporation]
Direct Link  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

VRF154FLMP Datasheet(HTML) 2 Page - Microsemi Corporation

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VRF154FL(MP)
Dynamic Characteristics
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
C
ISS
Input Capacitance
V
GS = 0V
1750
pF
C
oss
Output Capacitance
V
DS = 50V
775
C
rss
Reverse Transfer Capacitance
f = 1MHz
135
Functional Characteristics
Symbol
Parameter
Min
Typ
Max
Unit
G
PS
f = 30MHz, V
DD = 50V, IDQ = 800mA, Pout = 600W
17
dB
η
D
f = 30MHz, V
DD = 50V, IDQ = 800mA, Pout = 600WPEP
45
%
IMD
(d3)
f1 = 30MHz, f2 = 30.001MHz, V
DD = 50V, IDQ = 800mA, Pout = 600WPEP
1
-25
dBc
1. To MIL-STD-1311 Version A, test method 2204B, Two Tone, Reference Each Tone
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
0
20
40
60
80
100
120
140
0
2
4
6
8
10
0
20
40
60
80
100
120
140
160
0
5
10
15
20
25
30
1
10
100
1
10
100
800
1.0E−10
1.0E−9
1.0E−8
0
25
50
75
100
C
iss
V
DS(ON), DRAIN-TO-SOURCE VOLTAGE (V)
FIGURE 1, Output Characteristics
T
J= 125°C
V
DS, DRAIN-TO-SOURCE VOLTAGE (V)
FIGURE 3, Capacitance vs Drain-to-Source Voltage
V
DS, DRAIN-TO-SOURCE VOLTAGE (V)
FIGURE 4, Forward Safe Operating Area
9.0V
11V
6.0V
14V
V
GS, GATE-TO-SOURCE VOLTAGE (V)
FIGURE 2, Transfer Characteristics
250μs PULSE
TEST<0.5 % DUTY
CYCLE
T
J= -55°C
T
J= 25°C
C
oss
C
rss
Rds(on)
PD Max
T
J
= 125°C
T
C
= 75°C
Typical Performance Curves
I
DMax
V
GS = 4.0V
8.0V
7.0V
5.0V



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