SMG2305PE datasheet(2/4 Pages) SECOS

2 / 4 page

Elektronische Bauelemente

SMG2305PE

-4.5 A, -20 V, RDS(ON) 43 m

P-Channel Enhancement MOSFET

14-Jan-2011 Rev. B

Page 2 of 4

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)

Parameter

Symbol

Min

Typ

Max

Unit

Test Conditions

Static

Gate-Threshold Voltage

VGS(th)

-0.7

VDS = VGS, ID = -250μA

Gate-Body Leakage

IGSS

±100

VDS = 0V, VGS= ±8V

-1

VDS = -16V, VGS= 0V

Zero Gate Voltage Drain Current

IDSS

-10

μA

VDS = -16V, VGS= 0V, TJ=55°C

On-State Drain Current

ID(ON)

-10

VDS = -5V, VGS= -4.5V

VGS= -4.5V, ID = -3.6A

VGS= -2.5V, ID = -3.1A

Drain-Source On-Resistance

RDS(ON)

120

mΩ

VGS= -1.8V, ID = -2.7A

Forward Transconductance

gFS

VDS= -5V,,ID = -1.25A

Diode Forward Voltage

VSD

-0.60

IS= -0.46A, VGS= 0V

Dynamic

Total Gate Charge

12.0

Gate-Source Charge

Qgs

2.0

Gate-Drain Charge

Qgd

2.0

ID= -2.4A

VDS= -5V

VGS= -4.5V

Turn-On Delay Time

Td(ON)

6.5

Rise Time

Turn-Off Delay Time

Td(OFF)

Fall Time

IL= -1A, VDD= -10V

VGEN= -4.5V

RG= 6Ω

Notes:

Pulse test：PW ≦ 300 us duty cycle ≦ 2%.

Guaranteed by design, not subject to production testing.

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