SMG2306NE datasheet(2/4 Pages) SECOS

2 / 4 page

Elektronische Bauelemente

SMG2306NE

3.5A , 30V , RDS(ON) 58 m

N-Channel Enhancement Mode Mos.FET

12-Apr-2011 Rev. B

Page 2 of 4

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Static

Gate-Threshold Voltage

VGS(th)

1.0

VDS=VGS, ID=250μA

Gate-Body Leakage

IGSS

±100

VDS=0, VGS=20V

VDS=24V, VGS=0

Zero Gate Voltage Drain Current

IDSS

μA

VDS=24V, VGS=0, TJ= 55°C

On-State Drain Current

ID(on)

VDS =5V, VGS=10V

VGS=10V, ID=3.5A

Drain-Source On-Resistance

RDS(ON)

mΩ

VGS=4.5V, ID=3A

Forward Transconductance

gfs

6.9

VDS=15V, ID=3.5A

Diode Forward Voltage

VSD

0.8

IS=2.3A, VGS= 0

DYNAMIC

Total Gate Charge

2.2

Gate-Source Charge

Qgs

0.5

Gate-Drain Charge

Qgd

0.8

VDS=15V, VGS=4.5V,

ID=3.5A

Turn-on Delay Time

Td(on)

Rise Time

Turn-off Delay Time

Td(off)

Fall Time

VDD=25V, VGEN=10V,

RL=25Ω, ID=1A

Notes:

Pulse test：PW ≦ 300 us duty cycle ≦ 2%.

Guaranteed by design, not subject to production testing.

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