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SMS0610 Datasheet(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH

Part # SMS0610
Description  P-Channel Enhancement Mode Power Mos.FET
PDF  5 Pages
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Manufacturer  SECOS [SeCoS Halbleitertechnologie GmbH]
Direct Link  http://www.secosgmbh.com
Logo SECOS - SeCoS Halbleitertechnologie GmbH

SMS0610 Datasheet(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH

  SMS0610 Datasheet HTML 1Page - SeCoS Halbleitertechnologie GmbH SMS0610 Datasheet HTML 2Page - SeCoS Halbleitertechnologie GmbH SMS0610 Datasheet HTML 3Page - SeCoS Halbleitertechnologie GmbH SMS0610 Datasheet HTML 4Page - SeCoS Halbleitertechnologie GmbH SMS0610 Datasheet HTML 5Page - SeCoS Halbleitertechnologie GmbH  
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Electrical Characteristics( Tj=25 C Unless otherwise specified)
o
RDS(ON)
Parameter
Symbol
Max.
Typ.
Test Condition
Min.
Unit
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Source Leakage Current
Drain-Source Leakage Current (Tj=25 )
Static Drain-Source On-Resistance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
BVDSS
VGS(th)
IGSS
IDSS
Crss
Td(ON)
Td(Off)
Tr
Ciss
Coss
Tf
-60
10
-1
7.5
10
2.8
6.5
10
7.2
80
11
4
±
V
V
uA
uA
nS
pF
Ω
VGS=0V
VDS=-25V
f=1.0MHz
VDD=-25V
ID=-120mA
VGS=-10V
RG=6 Ω
VGS=-10V, ID=-0.5A
VGS=-4.5V, ID=-0.025A
VGS=0V, ID=-10uA
VGS=±20V,VDS=0V
VDS=-60V,VGS=0
VDS=VGS, ID=-250uA
_
_
_
_
_
_
Forward On Voltage
VSD
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
-0.75
_
ID=-200mA,VGS=0V.
V
-1.4
Forward Transconductance
Gfs
mS
430
VDS=-10V, ID=-0.1A
_
_
_
-3
C
o
-1
On-State Drain Current
ID(ON)
600
_
_
mA
VDS=-10V,VGS=-10V
_
Notes: 1.Surface mounted on FR4 board; t 10 sec.
Guaranteed by design, not subject to production testing.
2.Pulse width 300us, dutycycle 2%.
≦
≦
3.
≦
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 2 of 5
Elektronische Bauelemente
SMS0610
-0.185A, -60V,RDS(ON) 7.5
P-Channel Enhancement Mode Power Mos.FET
Ω



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