SSF1321P datasheet(2/4 Pages) SECOS

2 / 4 page

SSF1321P

-1.7A, -20V, RDS(on) 0.079Ω

P-Channel MOSFET

Elektronische Bauelemente

17-Jun-2010 Rev. A

Page 2 of 4

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)

PARAMETER

SYMBOL

MIN

TYP

MAX

UNIT

TEST CONDITION

STATIC CARACTERISTICS

Gate-Threshold Voltage

VGS(th)

-0.4

VDS= VGS, ID = -250μA

Gate-Source Leakage Current

IGSS

±100

VDS= 0V, VGS= ±8V

Zero Gate Voltage Drain Current

IDSS

-1

μA

VDS= -16V, VGS= 0V

-10

VDS= -16V, VGS= 0V, TJ= 55°C

On-State Drain Current

ID(on)

-5

VDS= -5V, VGS= -4.5V

Drain-Source On-Resistance

RDS(ON)

mΩ

VGS= -4.5V, ID= -1.7A

110

VGS= -2.5V, ID= -1.5A

Forward Transconductance

gFS

VDS= -5V, ID= -1.25A

Diode Forward Voltage

VSD

-0.65

IS= -0.46A, VGS= 0V

DYNAMIC CHARACTERISTICS

Total Gate Charge

7.2

VDS= -10V

VGS= -4.5V

ID= -1.7A

Gate-Source Charge

Qgs

1.7

Gate-Drain Charge

Qgd

1.5

Turn-on Delay Time

Td(ON)

VDD= -10V

IL= -1A

VGEN= -4.5V

RG= 6Ω

Rise Time

Turn-off Delay Time

Td(OFF)

Fall Time

Notes：

Pulse test：PW ≦ 300us duty cycle ≦ 2%.

Guaranteed by design, not subject to production testing.

Repetitive rating, pulse width limited by junction temperature.

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