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SSF1331P Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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SSF1331P Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 4 page  SSF1331P -1.5A, -30V, RDS(on) 0.112Ω P-Channel MOSFET Elektronische Bauelemente 17-Jun-2010 Rev. A Page 1 of 4 RoHS Compliant Product A Suffix of “-C” specifies halogen & lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. FEATURES Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe SOT-323 saves board space. Fast switching speed. High performance trench technology. PRODUCT SUMMARY VDS(V) RDS(on) ( ID(A) -30 0.112@VGS= -10V -1.5 0.172@VGS= -4.5V -1.2 MAXIMUM RATINGS (TA = 25°C unless otherwise specified) PARAMETER SYMBOL RATING UNIT Drain – Source Voltage VDS -30 V Gate – Source Voltage VGS ±20 V Continuous Drain Current a ID @ TA=25°C -1.5 A ID @ TA=70°C -1.2 Pulsed Drain Current b IDM -2.5 A Continuous Source Current (Diode Conduction) a IS ±0.28 A Power Dissipation a PD@ TA=25°C 0.34 W PD@ TA=70°C 0.22 Operating Junction & Storage Temperature Range TJ, TSTG -55~150 °C THERMAL RESISTANCE RATINGS Maximum Thermal Resistance Junction-Ambient a t ≦ 5 sec RθJA 375 °C / W Steady-State 430 Note: a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature. REF. Millimeter REF. Millimeter Min. Max. Min. Max. A 1.80 2.20 G 0.100 REF. B 1.80 2.45 H 0.525 REF. C 1.15 1.35 J 0.08 0.25 D 0.80 1.10 K - - E 1.20 1.40 L 0.650 TYP. F 0.20 0.40 SOT-323 Top View A L C B D G H J F K E 1 2 3 1 2 3 Gate Source Drain |
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