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SSP7200N Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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SSP7200N Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 2 page ![]() SSP7200N 3 A, 200 V, RDS(ON) 400 m N-Channel Enhancement MOSFET Elektronische Bauelemente 30-Jul-2010 Rev. A Page 1 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. FEATURES Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe SOP-8PP saves board space. Fast switching speed. High performance trench technology. PRODUCT SUMMARY PRODUCT SUMMARY VDS(V) RDS(on) (m ID(A) 200 400@VGS= 10V 3.0 450@VGS= 4.5V 2.8 ABSOLUTE MAXIMUM RATINGS AND THERMAL DATA(TA = 25°C unless otherwise specified) PARAMETER SYMBOL RATING UNIT Drain-Source Voltage VDS 200 V Gate-Source Voltage VGS 20 V Continuous Drain Current A TA=25°C ID 3 A TA=70°C 2.4 Pulsed Drain Current B IDM 50 A Continuous Source Current (Diode Conduction) A IS 2.3 A Power Dissipation A TA=25°C PD 5.0 W TA=70°C 3.2 Operating Junction and Storage Temperature Range TJ, TSTG -55 ~ 150 °C THERMAL RESISTANCE DATA Maximum Junction to Ambient A t≦10 sec RθJA 25 °C / W Steady State 65 Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature. Gate Source Drain REF. Millimeter REF. Millimeter Min. Max. Min. Max. A 1.00 1.10 θ 0 ° 12 ° B 5.70 5.80 b 0.33 0.51 C 0.20 0.30 d 1.27BSC D 3.61 3.98 e 1.35 1.75 E 5.40 6.10 g 1.10 - F 0.08 0.20 G 3.60 3.99 SOP-8PP B E F G g A e b θ D C d |
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