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BAS316RR Datasheet(PDF) 2 Page - Taiwan Semiconductor Company, Ltd |
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BAS316RR Datasheet(HTML) 2 Page - Taiwan Semiconductor Company, Ltd |
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2 / 3 page ![]() BAS316 200mW High Voltage SMD Switching Diode Small Signal Diode Electrical Characteristics I R = 100 uA IF= 1.0 mA IF= 10 mA IF= 50 mA IF= 150 mA VR= 75 V VR= 25 V Junction Capacitance VR= Reverse Recovery Time IF=IR= Tape & Reel specification V(BR) Units Max Type Number V Symbol 100 - Min 3.94 ± 0.10 Reverse Breakdown Voltage 0.62 VF IR Forward Voltage Reverse Leakage Voltage 0.715 Feed hole width D2 13.0 ± 0.20 Item Symbol Dimension Carrier depth C 1.50 ±0.10 1.85 ± 0.10 D1 55 Min Sprocket hole 1.5 ± 0.1 4.00 ±0.10 178 ± 1 Carrier width A Reel outside diameter D d Carrier length B Reel inner diameter 8.00 ±0.20 E 1.75 ±0.10 Punch hole position F 3.50 ±0.05 Sprocke hole pitch Embossment center Sprocke hole position P0 Reel width W1 14.4 Max P1 2.00 ±0.05 Overall tape thickness T 0.23 ± 0.05 Tape width W - - - - 0.855 1.000 1.250 1.00 V uA pF ns 10mA, RL=100Ω 0, f=1.0MHz 0.03 1.5 4.0 CJ Trr - - Top Cover Tape Carieer Tape Any Additional Label (If Required) TSC label T C d P1 P0 A B F W W1 D1 D2 D Version : A10 |
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