SILICON PLANAR EPITAXIAL

NPN TRANSISTOR

2N3114CSM

Semelab Limited

Semelab Limited

Semelab Limited

Semelab Limited

Coventry Road, Lutterworth, Leicestershire, LE17 4JB

Telephone +44 (0) 1455 556565

Fax +44 (0) 1455 552612

Document Number 5293

Issue 2

Page 2 of 3

Symbols

Parameters

Test Conditions

Min.

Typ

Max.

Units

ICEO

Collector-Cut-Off Current

VCE = 150V

IB = 0

100

µ

A

VCB = 150V

IE = 0

10

µA

VCB = 100V

IE = 0

10

nA

ICBO

Collector-Cut-Off Current

TA = 150°C

10

µA

VEB = 5V

IC = 0

1.0

µA

IEBO

Emitter-Cut-Off Current

VEB = 4V

IC = 0

100

nA

IC = 0.1mA

VCE = 10V

15

35

IC = 30mA

VCE = 10V

30

60

120

hFE

(1)

Forward-current transfer

ratio

TA = 150°C

12

24

VCE(sat)

(1)

Collector-Emitter Saturation

Voltage

IC = 50mA

IB = 5mA

1.0

VBE(sat)

(1)

Base-Emitter Saturation

Voltage

IC = 50mA

IB = 5mA

0.9

V

DYNAMIC CHARACTERISTICS

IC = 30mA

VCE = 10V

| hfe |

Small signal forward-current

transfer ratio

f = 20MHz

2

VCB = 20V

IE = 0

Cobo

Output Capacitance

f = 1.0MHz

9

pF

VEB = 0.5V

IC = 0

Cibo

Input Capacitance

f = 1.0MHz

80

pF

Notes

Notes

Notes

Notes

(1)

Pulse Width ≤ 300us, δ ≤ 2%