TSM5ND50

500V N-Channel Power MOSFET

1/9

Version: F11

TO-251

(IPAK)

TO-252

(DPAK)

PRODUCT SUMMARY

500

2.2

General Description

The TSM5ND50 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS

technology. This advanced technology has been especially tailored to minimize on-state resistance, provide

superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

These devices are well suited for high efficiency switch mode power supply, power factor correction, electronic

lamp ballast based on half bridge.

Features

●

Low gate charge typical @ 20nC

●

Low Crss typical @ 17pF

●

Fast Switching

●

Improved dv/dt capability

●

ESD Protection

Block Diagram

N-Channel MOSFET

Ordering Information

Part No.

Package

Packing

TSM5ND50CP ROG

TO-252

2,500pcs / 13” Reel

TSM5ND50CH C5G

TO-251

75pcs / Tube

Note: “G” denotes for Halogen Free

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

500

V

Gate-Source Voltage

±30

V

Continuous Drain Current

4.4

A

Pulsed Drain Current

17.6

A

Continuous Source Current (Diode Conduction)

4.4

A

Peak Diode Recovery (Note 2)

dv/dt

4.5

V/ns

Single Pulse Drain to Source Avalanche Energy (Note 3)

130

mJ

Total Power Dissipation @Ta = 25

70

W

Operating Junction and Storage Temperature Range

-55 to +150

Thermal Performance

Parameter

Symbol

Limit

Unit

Thermal Resistance - Junction to Case

1.78

Thermal Resistance - Junction to Ambient

62.5

Notes: Surface mounted on FR4 board t ≤ 10sec

Pin Definition:

1. Gate

2. Drain

3. Source