P-CHANNEL

POWER MOSFET

SML6609ASMD05

Semelab Limited

Semelab Limited

Semelab Limited

Semelab Limited

Coventry Road, Lutterworth, Leicestershire, LE17 4JB

Telephone +44 (0) 1455 556565

Fax +44 (0) 1455 552612

Document Number 8678

Issue 2

Page 2 of 3

Symbol

Parameters

Test Conditions

Min

Typ

Max

Units

BVDSS

Drain-Source Breakdown

Voltage

VGS = 0

ID = -250µA

-30

V

j

T

VDSS

B

∆

∆

Temperature Coefficient of

Breakdown Voltage

Reference

to 25°C

ID = -250µA

-0.022

V/°C

VGS = -10V

ID = -7A

0.04

Tj = 125°C

0.54

RDS(on)

1

Static Drain-Source

On-State Resistance

VGS = -7.5V

ID = -5.5A

0.06

Ω

VGS(th)

Gate Threshold Voltage

VDS = VGS

ID = -250µA

-2.5

-4.5

V

j

T

th

GS

V

∆

∆

)

(

Temperature Coefficient of

Gate Threshold Voltage

Reference

to 25°C

ID = -250µA

-0.004

V/°C

gfs

1

Forward Transconductance

VDS = -10V

I D = -7A

14.5

S(Ʊ)

IDSS

Drain-Source Leakage Current

VGS = 0

VDS = -24V

-3.0

µA

IGSS

Forward Gate-Source Leakage

VGS = -20V

-100

IGSS

Reverse Gate-Source Leakage

VGS = 20V

100

nA

ID(on)

On-State Drain Current

VGS = -10V

VDS = -5V

-20

A

DYNAMIC CHARACTERISTICS

Ciss

Input Capacitance

1975

Coss

Output Capacitance

315

Crss

Reverse Transfer Capacitance

VGS = 0

VDS = -25V

f = 1.0MHz

160

pF

Qg

Total Gate Charge

46

Qgs

Gate-Source Charge

19

Qgd

Gate-Drain Charge

VGS = -10V

ID = -7.2A

VDS = -15V

11

nC

td(on)

Turn-On Delay Time

20

tr

Rise Time

28

td(off)

Turn-Off Delay Time

39

tf

Fall Time

VDD = -15V

ID = -1.0A

RG = 6Ω

VGS = -10V

27

ns

SOURCE – DRAIN DIODE CHARACTERISTICS

IS

Continuous Source Current

-2.1

A

VSD

1

Diode Forward Voltage

IS = -2.1A

VGS = 0

-1.2

V