SIR804DP datasheet(4/13 Pages) VISHAY

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Document Number: 65703

S10-2680-Rev. B, 22-Nov-10

Vishay Siliconix

SiR804DP

New Product

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Source-Drain Diode Forward Voltage

Threshold Voltage

0.0

0.2

0.4

0.6

0.8

1.0

1.2

VSD - Source-to-Drain Voltage (V)

0.01

0.001

0.1

100

TJ = 25 °C

TJ = 150 °C

- 1.0

- 0.7

- 0.4

- 0.1

0.2

0.5

- 50

- 25

100

125

150

ID = 250 µA

TJ - Temperature (°C)

ID = 5 mA

On-Resistance vs. Gate-to-Source Voltage

Single Pulse Power, Junction-to-Ambient

0.00

0.01

0.02

0.03

0.04

0.05

VGS - Gate-to-Source Voltage (V)

TJ = 25 °C

TJ = 125 °C

ID = 20 A

120

160

200

00.01

Time (s)

0.1

Safe Operating Area, Junction-to-Ambient

0.01

100

0.01

0.1

VDS - Drain-to-SourceVoltage(V)

* VGS > minimum VGS at which RDS(on) is specified

1 ms

10 ms

100 ms

0.1

TA = 25 °C

Single Pulse

Limited by RDS(on)*

1 s

10 s

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