STL85N6F3 datasheet(4/15 Pages) STMICROELECTRONICS

Part #	STL85N6F3

Description	N-channel 60 V, 0.0057 廓, 19 A PowerFLAT??5x6 STripFET??Power MOSFET

PDF	15 Pages

Scroll/Zoom	100%

Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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4 / 15 page

Electrical characteristics

STL85N6F3

4/15

Doc ID 15340 Rev 2

Electrical characteristics

(TCASE=25 °C unless otherwise specified)

Table 4.

On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage

ID = 250 µA, VGS= 0

IDSS

Zero gate voltage drain

current (VGS = 0)

VDS = Max rating,

VDS = Max rating @125°C

100

µA

IGSS

Gate body leakage current

(VDS = 0)

VGS = ±20 V

200

VGS(th)

Gate threshold voltage

VDS= VGS, ID = 250 µA

RDS(on)

Static drain-source on

resistance

VGS= 10 V, ID= 8.5A

0.0057 0.0065

Table 5.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS =25 V, f=1 MHz,

VGS=0

3050

659

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD=30 V, ID = 19 A

VGS =10 V

(see Figure 14)

49.8

14.6

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