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BAS40 Datasheet(PDF) 1 Page - Diotec Semiconductor |
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BAS40 Datasheet(HTML) 1 Page - Diotec Semiconductor |
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1 / 2 page ![]() BAS40, BAS40-04, BAS40-05, BAS40-06 BAS40, BAS40-04, BAS40-05, BAS40-06 Surface Mount Schottky Barrier Single/Double Diodes Schottky-Barrier Einzel-/Doppel-Dioden für die Oberflächenmontage Version 2005-06-21 Dimensions - Maße [mm] Power dissipation – Verlustleistung 310 mW Repetitive peak reverse voltage Periodische Spitzensperrspannung 40 V Plastic case Kunststoffgehäuse SOT-23 (TO-236) Weight approx. – Gewicht ca. 0.01 g Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle Maximum ratings (TA = 25°C) Grenzwerte (TA = 25°C) per diode / pro Diode BAS40-series Power dissipation – Verlustleistung 1)Ptot 310 mW 2) Max. average forward current (dc) Dauergrenzstrom IFAV 200 mA 2) Repetitive peak forward current Periodischer Spitzenstrom IFRM 300 mA 2) Non repetitive peak forward surge current Stoßstrom-Grenzwert tp ≤ 1 s IFSM 0.6 A Repetitive peak reverse voltage Periodische Spitzensperrspannung VRRM 40 V Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur Tj TS -55...+150°C -55…+150°C Characteristics (Tj = 25°C) Kennwerte (Tj = 25°C) Forward voltage 3) Durchlass-Spannung 3) IF = 1 mA IF = 10 mA IF = 40 mA VF VF VF < 380 mV < 500 mV < 1.00 V Leakage current Sperrstrom VR = 30 V VR = 40 V IR IR < 200 nA < 10 µA Max. junction capacitance – Max. Sperrschichtkapazität VR = 0 V, f = 1 MHz CT 5 pF Reverse recovery time – Sperrverzug IF = 10 mA über/through IR = 10 mA bis/to IR = 1 mA trr < 5 ns Thermal resistance junction to ambient air Wärmewiderstand Sperrschicht – umgebende Luft RthA < 400 K/W 2) 1 Total power dissipation of both diodes − Summe der Verlustleistungen beider Dioden 2 Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss 3 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2% © Diotec Semiconductor AG http://www.diotec.com/ 1 1.9 Type Code 3 2 1 0.4 2.9 ±0.1 1.1 |
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