For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824

Phone: 978-250-3343

Fax: 978-250-3373

Order On-line at www.hittite.com

Application Support: Phone: 978-250-3343 or apps@hittite.com

7

7 - 55

Output IP3 vs. Input Power @ 950 MHz

Reverse Isolation vs. Temperature

30

31

32

33

34

35

36

37

38

39

40

-20

-15

-10

-5

0

1 MHz Tone Separation

6 MHz Tone Separation

INPUT POWER PER TONE (dBM)

-30

-25

-20

-15

-10

-5

0

0.7

0.75

0.8

0.85

0.9

0.95

1

+25 C

+85 C

-40 C

FREQUENCY (GHz)

GaAs PHEMT MMIC LOW NOISE

AMPLIFIER, 700 - 1000 MHz

v03.0610

Typical Supply Current vs. Vdd

Vdd (Vdc)

Idd (mA)

+4.5

98

+5.0

100

+5.5

102

Drain Bias Voltage (Vdd)

+8.0 Vdc

RF Input Power (RFIN)(Vs = +5.0 Vdc)

+15 dBm

Channel Temperature

150 °C

Continuous Pdiss (T = 85 °C)

(derate 15.6 mW/°C above 85 °C)

1.015 W

Thermal Resistance

(channel to ground paddle)

64.1 °C/W

Storage Temperature

-65 to +150 °C

Operating Temperature

-40 to +85 °C

Absolute Maximum Ratings

ELECTROSTATIC SENSITIVE DEVICE

OBSERVE HANDLING PRECAUTIONS