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20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

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7

7 - 3

GaAs PHEMT MMIC LOW NOISE

AMPLIFIER, 700 - 1000 MHz

v01.0610

P1dB vs. Temperature @ Idd = 73 mA

Psat vs. Temperature @ Idd = 73 mA

Output IP3 vs. Temperature @ Idd = 73 mA

15

17

19

21

23

25

0.7

0.75

0.8

0.85

0.9

0.95

1

+25 C

+85 C

-40 C

FREQUENCY (GHz)

30

32

34

36

38

40

0.7

0.75

0.8

0.85

0.9

0.95

1

+25 C

+85 C

-40 C

FREQUENCY (GHz)

15

17

19

21

23

25

0.7

0.75

0.8

0.85

0.9

0.95

1

+25 C

+85 C

-40 C

FREQUENCY (GHz)

Gain, Noise Figure &

Power vs. Supply Current @ 900 MHz

12

14

16

18

20

22

24

0.4

0.6

0.8

1

60

70

80

90

100

110

120

GAIN

P1dB

Noise figure

SUPPLY CURRENT (mA)

Typical Supply Current vs. Vdd

with Rbias = 10 Ohms

Vdd (Vdc)

Idd (mA)

+4.5

73.0

+5.0

73.4

+5.5

73.6

Drain Bias Voltage (Vdd)

+8.0 Vdc

RF Input Power (RFIN)(Vs = +5.0 Vdc)

+15 dBm

Channel Temperature

150 °C

Continuous Pdiss (T = 85 °C)

(derate 11.83 mW/°C above 85 °C)

0.769 W

Thermal Resistance

(channel to ground paddle)

84.5 °C/W

Storage Temperature

-65 to +150 °C

Operating Temperature

-40 to +85 °C

Absolute Maximum Ratings

Idd (mA)

Rbias (Ohms)

60

12

70

10

80

9.1

100

6.8

120

5.1

Recommended Bias Resistor Values

for Various Idd

ELECTROSTATIC SENSITIVE DEVICE

OBSERVE HANDLING PRECAUTIONS