For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

8

8 - 160

Absolute Maximum Ratings

Drain Bias Voltage (Vcc)

+7.0 Vdc

RF Input Power (RFIN)(Vcc = +5.0 Vdc)

-5 dBm

Junction Temperature

150 °C

Continuous Pdiss (T = 85 °C)

(derate 14 mW/°C above 85 °C)

0.942 W

Thermal Resistance

(junction to ground paddle)

69 °C/W

Storage Temperature

-65 to +150 °C

Operating Temperature

-40 to +85 °C

ESD Sensitivity (HBM)

Class 1B

v02.0706

SiGe HBT MMIC LOW NOISE

AMPLIFIER, 1.2 - 3.0 GHz

Small Signal Parameters Input Stage

Small Signal Parameters Output Stage

Typical Supply Current vs. Vcc

Vcc (Vdc)

Icc (mA)

4.5

17

5.0

21

5.5

24

P1dB Individual Stages

Noise Figure Individual Stages

0

1

2

3

4

0.5

1

1.5

2

2.5

3

3.5

4

Input Stage

Output Stage

FREQUENCY (GHz)

-5

-1

3

7

11

15

0.5

1

1.5

2

2.5

3

3.5

4

P1dB Input Stage

P1dB Output Stage

FREQUENCY (GHz)

-40

-30

-20

-10

0

10

20

0.5

1

1.5

2

2.5

3

3.5

4

S21

S11

S22

S12

FREQUENCY (GHz)

-40

-35

-30

-25

-20

-15

-10

-5

0

5

10

15

0.5

1

1.5

2

2.5

3

3.5

4

S21

S11

S22

S12

FREQUENCY (GHz)