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2N5629 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited

Part # 2N5629
Description  Silicon NPN Power Transistors
PDF  3 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2N5629 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited

  2N5629 Datasheet HTML 1Page - Inchange Semiconductor Company Limited 2N5629 Datasheet HTML 2Page - Inchange Semiconductor Company Limited 2N5629 Datasheet HTML 3Page - Inchange Semiconductor Company Limited  
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Inchange Semiconductor
Product Specification
2
Silicon NPN Power Transistors
2N5629 2N5630
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
2N5629
100
VCEO(SUS)
Collector-emitter
sustaining voltage
2N5630
IC=0.2A ;IB=0
120
V
VCEsat-1
Collector-emitter saturation voltage
IC=10A; IB=1A
1.0
V
VCEsat-2
Collector-emitter saturation voltage
IC=16A ;IB=4A
2.0
V
VBEsat
Base-emitter saturation voltage
IC=10A; IB=1A
1.8
V
VBE
Base-emitter on voltage
IC=8A ; VCE=2V
1.5
V
ICBO
Collector cut-off current
VCB=ratedVCBO; IE=0
1.0
mA
2N5629
VCE=50V; IB=0
ICEO
Collector
cut-off current
2N5630
VCE=60V; IB=0
1.0
mA
ICEV
Collector cut-off current
VCE=ratedVCB; VBE(off)=1.5V
TC=150℃
1.0
5.0
mA
IEBO
Emitter cut-off current
VEB=7V; IC=0
1.0
mA
2N5629
25
100
hFE-1
DC current gain
2N5630
IC=8A ; VCE=2V
20
80
hFE-2
DC current gain
IC=16A ; VCE=2V
4
COB
Output capacitance
IE=0 ; VCB=10V ;f=0.1MHz
500
pF
fT
Transition frequency
IC=1A ; VCE=20V
1.0
MHz



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