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2N5881 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited

Part # 2N5881
Description  Silicon NPN Power Transistors
PDF  3 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2N5881 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited

  2N5881 Datasheet HTML 1Page - Inchange Semiconductor Company Limited 2N5881 Datasheet HTML 2Page - Inchange Semiconductor Company Limited 2N5881 Datasheet HTML 3Page - Inchange Semiconductor Company Limited  
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Inchange Semiconductor
Product Specification
2
Silicon NPN Power Transistors
2N5881 2N5882
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
2N5881
60
VCEO(SUS)
Collector-emitter
sustaining voltage
2N5882
IC=0.2A ;IB=0
80
V
VCEsat-1
Collector-emitter saturation voltage
IC=7A;IB=0.7A
1.0
V
VCEsat-2
Collector-emitter saturation voltage
IC=15A;IB=3.75A
4.0
V
VBEsat
Base-emitter saturation voltage
IC=15A;IB=3.75A
2.5
V
VBE
Base-emitter on voltage
IC=6A ; VCE=4V
1.5
V
ICBO
Collector cut-off current
VCB=ratedVCBO; IB=0
0.5
mA
2N5881
VCE=30V; IB=0
ICEO
Collector cut-off current
2N5882
VCE=40V; IB=0
1.0
mA
ICEX
Collector cut-off current
VCE=ratedVCE; VBE=1.5V
TC=150℃
0.5
5.0
mA
IEBO
Emitter cut-off current
VEB=5V; IC=0
1.0
mA
hFE-1
DC current gain
IC=2A ; VCE=4V
35
hFE-2
DC current gain
IC=6A ; VCE=4V
20
100
hFE-3
DC current gain
IC=15A ; VCE=4V
4
fT
Trainsistion frequency
IC=1A ; VCE=10V
4
MHz



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