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2N6106 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2N6106 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() Inchange Semiconductor Product Specification 2 Silicon PNP Power Transistors 2N6106 2N6108 2N6110 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT 2N6106 -30 2N6108 -50 VCEO(SUS) Collector-emitter sustaining voltage 2N6110 IC=-0.1A ;IB=0 -70 V VCEsat Collector-emitter saturation voltage IC=-7A;IB=-3A -3.5 V VBE Base-emitter on voltage IC=-7A ; VCE=-4V -3.0 V 2N6106 VCE=-20V; IB=0 2N6108 VCE=-40V; IB=0 ICEO Collector cut-off current 2N6110 VCE=-60V; IB=0 -1.0 mA 2N6106 VCE=-40V; VBE=1.5V VCE=-30V; BE=1.5V,TC=125℃ -0.1 -2.0 2N6108 VCE=-60V; VBE=1.5V VCE=-50V; BE=1.5V,TC=125℃ -0.1 -2.0 ICEX Collector cut-off current 2N6110 VCE=-80V; VBE=1.5V VCE=-70V; BE=1.5V,TC=125℃ -0.1 -2.0 mA IEBO Emitter cut-off current VEB=-5V; IC=0 -1.0 mA 2N6106 IC=-2A ; VCE=-4V 2N6108 IC=-2.5A ; VCE=-4V hFE-1 DC current gain 2N6110 IC=-3A ; VCE=-4V 30 150 hFE-2 DC current gain IC=-7A ; VCE=-4V 2.3 COB Output capacitance IE=0 ; VCB=-10V;f=1MHz 250 pF fT Transition frequency IC=-0.5A ; VCE=-4V;f=1MHz 10 MHz |
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