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2N6339 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2N6339 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc Website:www.iscsemi.cn isc Silicon NPN Power Transistors 2N6338/6339/6340/6341 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 100V(Min)- 2N6338 = 120V(Min)- 2N6339 = 140V(Min)- 2N6340 = 160V(Min)- 2N6341 ·High Switching Speed ·Low Saturation Voltage- : VCE(sat)= 1.0V(Max)@ IC= 10A APPLICATIONS ·Designed for use in industrial-military power amplifier and switching circuit applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 0.875 ℃/W SYMBOL PARAMETER VALUE UNIT 2N6338 120 2N6339 140 2N6340 160 VCBO Collector-Base Voltage 2N6341 180 V 2N6338 100 2N6339 120 2N6340 140 VCEO Collector-Emitter Voltage 2N6341 150 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 25 A ICM Collector Current-Peak 50 A IB Base Current-Continuous 10 A PC Collector Power Dissipation @TC=25℃ 200 W TJ Junction Temperature 200 ℃ Tstg Storage Temperature -65~200 ℃ |
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