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2N6358 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2N6358 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors 2N6358 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdwon voltage IC=0.2A ;IB=0 60 V VCEsat-1 Collector-emitter saturation voltage IC=10A ;IB=40mA 2.0 V VCEsat-2 Collector-emitter saturation voltage IC=20A ;IB=1A 4.0 V VBE sat Base-emitter saturation voltage IC=20A ;IB=1A 4.0 V VBE Base-emitter on voltage IC=10A ; VCE=4V 2.8 V ICEO Collector cut-off current VCE=60V;IB=0 1.0 mA ICBO Collector cut-off current VCB=80V; IE=0 0.5 mA IEBO Emitter cut-off current VEB=5V; IC=0 5.0 mA hFE-1 DC current gain IC=4A ; VCE=5V 1500 10000 hFE-2 DC current gain IC=20A ; VCE=5V 100 |
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