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2SB761 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SB761 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 3 page  Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB761 2SB761A DESCRIPTION ・ ・With TO-220C package ・Complement to type 2SD856/856A ・Low collector saturation voltage APPLICATIONS ・For audio frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Absolute maximum ratings(Tc=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT 2SB761 -60 VCBO Collector-base voltage 2SB761A Open emitter -80 V 2SB761 -60 VCEO Collector-emitter voltage 2SB761A Open base -80 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -3 A ICM Collector current-peak -5 A PC Collectorl power dissipation TC=25℃ 35 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ |
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