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2SB1063 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SB1063 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page  Inchange Semiconductor Product Specification 2 Silicon PNP Power Transistors 2SB1063 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEsat Collector-emitter saturation voltage IC=-3A ;IB=-0.3A -2.0 V VBE Base-emitter on voltage IC=-3A ; VCE=-5V -1.8 V ICBO Collector cut-off current VCB=-100V; IE=0 -50 μA IEBO Emitter cut-off current VEB=-3V; IC=0 -50 μA hFE-1 DC current gain IC=-20mA ; VCE=-5V 20 hFE-2 DC current gain IC=-1A ; VCE=-5V 40 200 hFE-3 DC current gain IC=-3A ; VCE=-5V 20 fT Transition frequency IC=-0.5A ; VCE=-5V 20 MHz COB Collector output capacitance IE=0 ; VCB=-10V; f=1MHz 170 pF hFE-2 Classifications R Q P 40-80 60-120 100-200 |
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