Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.

Features

■ High ruggedness

■ R

■ Gate Charge (Typ 20nC)

■ Improved dv/dt Capability

■ 100% Avalanche Tested

General Description

These N-channel enhancement mode power field effect transistors are produced using

SAMWIN’s proprietary, planar stripe, DMOS technology.

This advanced technology enable power MOSFET to have better characteristics, such as

fast switching time, low on resistance, low gate charge and especially excellent avalanche

characteristics. These devices are widely used in AC-DC power suppliers, DC-DC

converters and H-bridge PWM motor drivers

N-channel MOSFET

Absolute maximum ratings

Thermal characteristics

Symbol

Parameter

Value

Unit

Min.

Typ.

Max.

R

thjc

Thermal resistance, Junction to case

3.58

R

thcs

Thermal resistance, Case to Sink

0.5

R

thja

Thermal resistance, Junction to ambient

62.5

Jun. 2011. Rev. 2.0

1/7

BV

I

D

: 6A

R

1

2

3

1. Gate 2. Drain 3. Source

1

2

3

1

2

3

TO-251

TO-252

SW6N65

SAMWIN

Item

Sales Type

Marking

Package

Packaging

1

SW F 6N65

SW6N65

TO-220F

TUBE

2

SW I 6N65

SW6N65

TO-251

TUBE

3

SW D 6N65

SW6N65

TO-252

REEL

Order Codes

TO-220F

1

2

3

Symbol

Parameter

Value

Unit

TO-220F

TO-251/252

V

DSS

Drain to Source Voltage

600

V

I

D

Continuous Drain Current (@T

6.0

A

I

DM

Drain current pulsed

(note 1)

24

A

V

GS

Gate to Source Voltage

± 30

V

E

AS

Single pulsed Avalanche Energy

(note 2)

250

mJ

E

AR

Repetitive Avalanche Energy

(note 1)

10.6

mJ

dv/dt

Peak diode Recovery dv/dt

(note 3)

4.5

V/ns

P

D

Total power dissipation (@T

64

W

0.45

T

Operating Junction Temperature & Storage Temperature

-55 ~ + 150

T

L

Maximum Lead Temperature for soldering

purpose, 1/8 from Case for 5 seconds.

300

275