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SWD100N03 Datasheet(PDF) 2 Page - Xian Semipower Electronic Technology Co., Ltd. |
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SWD100N03 Datasheet(HTML) 2 Page - Xian Semipower Electronic Technology Co., Ltd. |
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2 / 5 page ![]() Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. Electrical characteristic ( T C = 25 oC unless otherwise specified ) Symbol Parameter Test conditions Min. Typ. Max. Unit Off characteristics BV DSS Drain to source breakdown voltage V GS=0V, ID=250uA 30 - - V I DSS Drain to source leakage current V DS=30V, VGS=0V - - 1 uA V DS=24V, TC=125 oC - - 100 uA I GSS Gate to source leakage current, forward V GS=20V, VDS=0V - - 100 nA V GS=-20V, VDS=0V - - -100 nA Gate to source leakage current, reverse On characteristics V GS(TH) Gate threshold voltage V DS=VGS, ID=250uA 1.0 - 3.0 V R DS(ON) Drain to source on state resistance V GS=10V, ID = 50A - 4.2 5.3 mΩ Dynamic characteristics C iss Input capacitance V GS=0V, VDS=15V, f=1MHz - 9500 - pF C oss Output capacitance - 800 - C rss Reverse transfer capacitance - 300 - t d(on) Turn on delay time V DS=15V, ID=1A, R G=6Ω ,VGS=10V - 25.7 50 ns tr Rising time - 10 20 t d(off) Turn off delay time - 128 200 t f Fall time - 34 70 Q g Total gate charge V DS=15V, VGS=5V, ID=16A - 50 65 nC Q gs Gate-source charge - 20.8 - Q gd Gate-drain charge - 19 - Source to drain diode ratings characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit I S Continuous source current Integral reverse p-n Junction diode in the MOSFET - - 90 A V SD Diode forward voltage drop. I S=110A, VGS=0V - - 1.5 V ※. Notes 1. Repeatitive rating : pulse width limited by junction temperature. 2. L = 200uH, I AS = 110A, VDD = 25V, RG=25Ω, Starting TJ = 25 oC 3. I SD ≤ 110A, di/dt = 300A/us, VDD ≤ BVDSS, Staring TJ =25 oC 4. Pulse Test : Pulse Width ≤ 300us, duty cycle ≤ 2% 5. Essentially independent of operating temperature. SAMWIN 2/5 SW100N03 |
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